Recently, China has independently developed a 4-inch high-purity semi-insulating silicon carbide substrate products available. It is reported that the silicon carbide project developed by Shandong Tianyue made. China Electronics Materials Industry Association experts believe that the results of the leading domestic and has reached the international advanced level. Earlier, a Beijing enterprise and the Chinese Academy of Sciences, successfully developed from 2 inches to 6 inches of silicon carbide substrate, completed our SiC process from scratch. Nowadays, the second enterprise in our country has also realized mass production of silicon carbide materials, which indicates that the development of silicon carbide materials in our country is gradually becoming mature.
Observer network that informed, Shandong Tianyue is a silicon carbide manufacturing enterprises and Shandong University Materials Research Center. Materials Science and Technology has always been one of the shortcomings restricting the development of China's military industry. In January 2015, Observer Network reported that Beijing Tianke Heda Bluestar Semiconductor Co., Ltd. and CAS successfully developed a 6-inch silicon carbide substrate and formed a With an annual output of 70,000 silicon carbide wafer production lines, the company was once the only silicon carbide semiconductor materials manufacturing enterprises in China. However, the shortcomings of materials science and technology not only reflected in the technology, but also reflected in the production. Although compared to the lower the technical gap, but the observer network learned that Shandong Tianyue new production line will reach an annual output of 40-50 million 4-inch silicon carbide substrate extent, such a huge scale may mean that our country The cost of silicon carbide products is reduced, leaping in output.
As we all know, most of the current semiconductor materials are monocrystalline silicon. For a long time, China's monocrystalline silicon mainly relies on imports. Compared with single crystal silicon, the production and application of silicon carbide material has been very difficult. The world's most developed silicon carbide devices are the United States, Germany, Switzerland, Japan and other countries, but until now the industrial application of silicon carbide is mainly as an abrasive (Emery) to use. ABB Switzerland has once successfully developed a silicon carbide diode, but in 2002, due to process difficulties, the future is unknown, ABB terminated the silicon carbide project, showing the difficulty of research and development.
The important strategic value of semiconductor silicon carbide substrate and chip, making it always the United States Department of Commerce's embargo list, which also makes it difficult for our country to obtain the corresponding products from abroad. China's second enterprise on the 4-inch high-purity semi-insulating silicon carbide substrate product development success, indicating that China's silicon carbide wafer products in the process and production have been able to get rid of dependence on foreign countries, to the autonomous mass production and widespread application.
The physical properties of silicon carbide and silicon are very different. Monocrystalline silicon carbide has many superior physical properties than monocrystalline silicon, such as about 10 times the electric field strength, about 3 times higher thermal conductivity, about 3 times the width of the forbidden band, about twice the saturation drift velocity. In addition, although silicon carbide devices are much more difficult to process than single crystal silicon in specific applications, once the process is solved, the manufacturing process of the silicon carbide devices is short, the volume and weight are small, the anti-oxidation life is long, and the output power is high Will make it an ideal 21st century semiconductor material that is far superior to single crystal silicon. And silicon carbide materials on the energy consumption is very low, according to the annual output of 400,000 silicon carbide wafer substrate plan, only used in the lighting field, the annual energy consumption is equivalent to saving 26 million tons of standard coal, is a The ideal energy-saving materials.
Comparison of properties of single crystal silicon carbide (SIC) and single crystal silicon (SI) materials
Thus, with the rapid development of wireless communication technology, the demand for high power density and fast response speed of hardware systems is becoming more and more urgent. Silicon-based materials-based transistors have unparalleled monocrystalline silicon and gallium arsenide devices in the microwave radio frequency field Advantages for aerospace, microwave communications, electronic warfare, large-capacity information processing applications. Phased array radars for the U.S. military's fourth-generation fighter jets, electronic jammers and Aegis destroyers have begun to refurbish their SiC-based microwave devices. With the enhancement of the production capacity of silicon carbide wafers in China, both domestic fighters and warships will be able to replace the "clairvoyance" with better performance and narrow the gap with the United States in quality and quantity.
In addition to military applications, silicon carbide materials are also in urgent need of civilian semiconductors and power. According to the introduction of Shandong Tianyue official website, this is a private enterprise established in November 2010 to develop and produce semiconductor chips and substrate materials. It is an industrialized base, a high-tech enterprise of Shandong University, a brand building of Shandong Province Demonstration business. In the past, the production of silicon carbide wafers could only meet the needs of military products. The annual output of 400,000 pieces of silicon carbide chips means that silicon carbide wafers are no longer "special" products for military radar electronic equipment and their use may be extended to generate electricity , Power transmission, railway, lighting and other civilian areas, to play a greater role in the development of the national economy.
Domestic silicon carbide materials help domestic radar
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